note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rs0075f doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet features: ? piv: 100 volts ? low reverse leakage current ? low forward voltage drop ? guard ring for overvoltage protection ? isolated hermetically sealed package ? available in glass or ceramic seal packages ? custom lead forming available ? eutectic die attach ? 175 c operating junction temperature ? tx, txv, and space level screening available ssr2008ctm, ssr2008ctz ssr2009ctm, ssr2009ctz ssr2010ctm, SSR2010CTZ 20 amps 100 volts center tap schottky rectifier to-254 to-254z available in given voltage (2008, 2009, 2010) in the following configurations: to-254: ssr2010ctm, ssr2010ctmub, ssr2010ctmdb, ssr2010cam, ssr2010camub, ssr2010camdb ssr1010dm, ssr1010dmub, ssr1010dmdb to-254z: SSR2010CTZ, SSR2010CTZub, SSR2010CTZdb, ssr2010caz, ssr2010cazub, ssr2010cazdb ssr1010dz, ssr1010dzub, ssr1010dzdb maximum ratings 1 / symbol value unit peak repetitive reverse voltage and dc blocking voltage ssr2008ctm & ctz ssr2090ctm & ctz ssr2010ctm & ctz v rrm v rwm v r 80 90 100 volts average rectified forward current 3 / 4 / (resistive load, 60 hz, sine wave, t c = 25 c) i o 20 amps peak surge current 3 / 4 / (8.3 ms pulse, half sine wave, t a = 25 c) i fsm 300 amps operating and storage temperature t op & t stg -65 to +175 c maximum thermal resistance junction to case 3 / junction to case 2 / r jc 1.0 1.7 c/w note: 1 / all electrical characteristics @25 c, unless otherwise specified. 2 / per leg. 3 / pins 1 and 3 connected together. 4 / doubler: i o = 10a, i fsm = 200a.
note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rs0075f doc electrical characteristics 1 /, 2 / symbol max unit instantaneous forward voltage drop (300 - 500 s pulse) i f = 1a i f = 5a i f = 10a v f1 v f2 v f3 0.57 0.72 0.80 volts instantaneous forward voltage drop (300 - 500 s pulse) i f = 10a, t a = 100 c i f = 10a, t a = -55 c, v f4 v f5 0.70 0.90 volts reverse leakage current (300 s pulse minimum) v r = 100v, t a = 25 c v r = 100v, t c = 100 c i r1 i r2 100 5 a ma junction capacitance (v r = 10 v, f = 1mhz, t a = 25 c) c j 400 pf case outline: to-254 (suffix m) case outline: to-254z (suffix z) optional lead bend configuration suffix mdb & zdb suffux mub & zub pin assignment code function pin 1 pin 2 pin 3 ct common cathode anode cathode anode ca common anode cathode anode cathode d doubler cathode common anode dr reverse doubler anode common cathode note: 1 / all electrical characteristics @25 c, unless otherwise specified. 2 / per leg. solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com ssr2008ctm, ssr2008ctz ssr2009ctm, ssr2009ctz ssr2010ctm, SSR2010CTZ
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